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omponents
21201 Itasca Street Chatsworth
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MPSA55
MPSA56
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Pin Configuration
Bottom View
PNP Silicon
Amplifier Transistor
TO-92
A
E
C
B
E
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Junction Temperature
Storage Temperature
O
Rating
80
80
4.0
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Min
Max
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Units
B
Electrical Characteristics @ 25 C Unless Otherwise Specified
Parameter
Collector-Emitter Breakdown Voltage
(1)
(I
C
=1.0mAdc, I
B
=0)
MPSA55
MPSA56
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CE
=60Vdc, I
B
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
MPSA55
(V
CB
=80Vdc, I
E
=0)
MPSA56
DC Current Gain
(I
C
=10mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=1.0Vdc)
C
OFF CHARACTERISTICS
V
(BR)CEO
60
80
4.0
0.1
Vdc
Vdc
uAdc
D
V
(BR)EBO
I
CES
I
CBO
0.1
0.1
uAdc
G
ON CHARACTERISTICS
(1)
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(on)
100
100
0.25
1.2
Vdc
Vdc
DIM
A
B
C
D
E
G
DIMENSIONS
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain 鈥?Bandwidth Product
(3)
(I
C
=100mAdc, V
CE
=1.0Vdc,
50
f=100MHz)
MPSA55
MPSA56
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MHz
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
1.
2.
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