MPSA29
Discrete POWER & Signal
Technologies
MPSA29
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
100
100
12
800
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃
JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
擄
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
MPSA29
625
5.0
83.3
200
Units
mW
mW/
擄
C
擄C/W
擄C/W
漏
1997 Fairchild Semiconductor Corporation