MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA28/D
Darlington Transistors
NPN Silicon
COLLECTOR 3
MPSA28
MPSA29*
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA28
80
80
12
500
625
5.0
1.5
12
鈥?55 to +150
MPSA29
100
100
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
VBE = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
MPSA28
MPSA29
ICES
MPSA28
MPSA29
IEBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
500
500
100
nAdc
V(BR)CES
MPSA28
MPSA29
V(BR)CBO
MPSA28
MPSA29
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
nAdc
80
100
12
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
80
100
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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