MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS8098/D
Amplifier Transistors
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
COLLECTOR
3
NPN
MPS8098
MPS8099*
PNP
MPS8598
MPS8599*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Symbol
VCEO
VCBO
MPS8098
MPS8598
60
60
MPS8099
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
6.0
500
625
5.0
1.5
12
鈥?55 to +150
MPS8099
MPS8599
80
80
MPS8598
MPS8599
5.0
Vdc
mAdc
mW
mW/擄C
1
Unit
Vdc
Vdc
Watts
mW/擄C
擄C
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPS8098, MPS8598
MPS8099, MPS8599
IEBO
MPS8098, MPS8099
MPS8598, MPS8599
鈥?/div>
鈥?/div>
0.1
0.1
V(BR)CEO
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CBO
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)EBO
MPS8098, MPS8099
MPS8598, MPS8599
ICES
ICBO
鈥?/div>
鈥?/div>
0.1
0.1
碌A(chǔ)dc
6.0
5.0
鈥?/div>
鈥?/div>
鈥?/div>
0.1
碌A(chǔ)dc
碌A(chǔ)dc
60
80
鈥?/div>
鈥?/div>
Vdc
60
80
鈥?/div>
鈥?/div>
Vdc
Vdc
v
300
m
s, Duty Cycle = 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MPS8098相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-92
ETC
-
英文版
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
KEC
-
英文版
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
KEC [KEC(K...
-
英文版
SILICON TRANSISTOR
MICRO-ELECTRONI...
-
英文版
NPN (AMPLIFIER TRANSISTOR)
-
英文版
SILICON TRANSISTOR
MICRO-ELECTRONI...
-
英文版
NPN (AMPLIFIER TRANSISTOR)
SAMSUNG [S...
-
英文版
NPN General Purpose Amplifier
FAIRCHILD
-
英文版
NPN (AMPLIFIER TRANSISTOR)
-
英文版
NPN general purpose transistor
PHILIPS
-
英文版
Amplifier Transistors
ONSEMI
-
英文版
Amplifier Transistors
-
英文版
NPN General Purpose Amplifier
FAIRCHILD ...
-
英文版
NPN (AMPLIFIER TRANSISTOR)
SAMSUNG [S...
-
英文版
NPN general purpose transistor
PHILIPS [P...
-
英文版
Amplifier Transistors
ONSEMI [ON...
-
英文版
Amplifier Transistors
MOTOROLA [...
-
英文版
Mini size of Discrete semiconductor elements
ETC
-
英文版
Amplifier Transistors
ONSEMI
-
英文版
Amplifier Transistors
1
2
3
4
5
6
