SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
L
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
40
25
6
1.5
350
150
-55 150
0.6
)
UNIT
V
1
P
P
N
C
V
V
A
mW
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
M
1. EMITTER
2. BASE
3. COLLECTOR
* P
C
: Package Mounted On 99.5% Alumina (10 8
K
SOT-23
Marking
h
FE
Rank
Lot No.
Type Name
BH
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1)
DC Current Gain
h
FE
(2) (Note)
h
FE
(3)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(2) Classification
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=100 A, I
E
=0
I
C
=2mA, I
B
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, f=1MHz, I
E
=0
300
MIN.
-
-
40
25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
135
160
110
0.28
0.98
0.66
190
9
MAX.
100
100
-
-
-
300
-
0.5
1.2
1.0
-
-
V
V
V
MHz
pF
UNIT
nA
nA
V
V
B:85 160 , C : 120 200 , D : 160
2003. 3. 25
Revision No : 1
J
D
1/2
1
2
