MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6724/D
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
MPS6724
MPS6725
EMITTER 1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPS6724
40
50
12
1000
1.0
8.0
2.5
20
鈥?55 to +150
MPS6725
50
60
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPS6724
MPS6725
IEBO
V(BR)CES
MPS6724
MPS6725
V(BR)CBO
MPS6724
MPS6725
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
100
100
100
nAdc
50
60
12
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
40
50
鈥?/div>
鈥?/div>
Vdc
Vdc
v
300
m
s; Duty Cycle
v
2.0%.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPS6725 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN - 達林頓
1A
50V
1.5V @ 2mA，1A
-
4000 @ 1A，5V
1W
1GHz
通孔
TO-226-3、TO-92-3 長體
TO-92
散裝
MPS6725OS
MPS6725相關(guān)型號PDF文件下載
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