MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6717/D
One Watt Amplifier Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS6717
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
80
5.0
500
1.0
8.0
2.5
20
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
80
80
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
10
Vdc
Vdc
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
v
300
m
s; Duty Cycle
v
2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPS6717 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
500mA
80V
500mV @ 10mA，250mA
-
50 @ 250mA，1V
1W
-
通孔
TO-226-3、TO-92-3 長體
TO-92
散裝
MPS6717OS
MPS6717相關(guān)型號PDF文件下載
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