MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6530/D
Amplifier Transistor
NPN Silicon
COLLECTOR
3
2
BASE
MPS6530
1
1
EMITTER
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Value
40
60
5.0
600
625
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
q
JA
Max
0.2
Unit
擄C/mW
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IB = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 60擄C)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
0.05
2.0
40
60
5.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
m
Adc
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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