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MPS6515 Datasheet

  • MPS6515

  • NPN General Purpose Amplifier

  • 4頁

  • FAIRCHILD

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MPS6515/MMBT6515
MPS6515/MMBT6515
NPN General Purpose Amplifier
鈥?This device is designed as a general purpose
amplifier and switch.
鈥?The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
TO-92
1
1. Emitter 2. Base 3. Collector
3
2
SOT-23
1 Mark: 3J
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
25
40
4.0
200
-55 ~ +150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 0.5mA, I
B
= 0
I
C
=10碌A(chǔ), I
E
= 0
I
C
= 10碌A(chǔ), I
C
= 0
V
CE
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T = 60擄C
I
C
= 2.0mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 10V, I
E
= 0, f = 100kHz
250
150
Min.
25
40
4.0
50
1.0
500
0.5
3.5
V
pF
Max.
Units
V
V
V
nA
碌A(chǔ)
Off Characteristics
Collector-Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
h
FE
V
CE(sat)
C
obo
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
On Characteristics *
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
MPS6515
625
5.0
83.3
200
357
*MMBT6515
350
2.8
Units
mW
mW/擄C
擄C/W
擄C/W
* Device mounted on FR-4 PCB 1.6鈥?/div>
0.06"
漏2003 Fairchild Semiconductor Corporation
Rev. A. February 2003

MPS6515 產(chǎn)品屬性

  • 2,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 200mA

  • 25V

  • 500mV @ 5mA,50mA

  • -

  • 250 @ 2mA,10V

  • 625mW

  • -

  • 通孔

  • TO-226-3、TO-92-3 標準主體

  • TO-92-3

  • 散裝

MPS6515相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Small Signal Transistors
    CENTRAL
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC
  • 英文版
    Amplifier Transistors
    ONSEMI
  • 英文版
    Amplifier Transistors
    MOTOROLA
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC [ETC]
  • 英文版
    Small Signal Transistors
    CENTRAL [C...
  • 英文版
    Amplifier Transistors
    MOTOROLA [...
  • 英文版
    Amplifier Transistors
    ONSEMI [ON...
  • 英文版
    Small Signal Transistors
    CENTRAL
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC
  • 英文版
    Amplifier Transistors
    ONSEMI
  • 英文版
    Amplifier Transistors
    MOTOROLA
  • 英文版
    EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAM...
    KEC
  • 英文版
    Small Signal Transistors
    CENTRAL [C...
  • 英文版
    Amplifier Transistors
    MOTOROLA [...
  • 英文版
    Amplifier Transistors
    ONSEMI [ON...
  • 英文版
    EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAM...
    KEC [KEC(K...
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC [ETC]
  • 英文版
    Amplifier Transistor(NPN Silicon)
    ONSEMI
  • 英文版
    Amplifier Transistor
    MOTOROLA

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