MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6507/D
Amplifier Transistor
NPN Silicon
2
BASE
COLLECTOR
3
MPS6507
1
EMITTER
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
20
30
3.0
50
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60擄C)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
1.0
nAdc
m
Adc
20
30
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 2.0 mAdc, VCE = 10 Vdc)
hFE
25
75
鈥?/div>
鈥?/div>
SMALL鈥揝IGNAL CHARACTERISTICS
Current鈥揋ain 鈥?Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small鈥揝ignal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
fT
Cobo
hfe
700
鈥?/div>
20
800
1.25
鈥?/div>
鈥?/div>
2.5
鈥?/div>
MHz
pF
鈥?/div>
v
v
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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