Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
MPS4356
TO-92
Plastic Package
E
BC
General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T
a
=25潞C
Derate Above 25潞C
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
, T
stg
VALUE
80
80
5.0
800
625
5.0
- 55 to +150
UNITS
V
V
V
mA
mW
mW/潞C
潞C
R
th (j-c)
R
th (j-a)
83.3
200
潞C/W
潞C/W
ELECTRICAL CHARACTERISTICS (T
a
=25潞C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
*V
CEO
I
C
=10mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=10碌A(chǔ), I
E
=0
Collector Base Voltage
V
EBO
I
E
=10碌A(chǔ), I
C
=0
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
I
CBO
I
EBO
*h
FE
V
CB
=50V, I
E
= 0
V
CB
=50V, I
E
=0, T
a
=75潞C
V
EB
=4V, I
C
= 0
V
CE
=10V, I
C
=100碌A(chǔ)
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=100mA
V
CE
=10V, I
C
=500mA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
*V
CE (sat)
*V
BE (sat)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
*Pulse test pulse width<300
碌
s, duty cycle <2%
MPS4356Rev180303E
MIN
80
80
5
TYP
MAX
UNITS
V
V
V
50
5.0
100
25
40
50
40
30
0.15
0.50
0.90
1.10
250
nA
碌A(chǔ)
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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