MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3646/D
Switching Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS3646
Motorola Preferred Device
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
鈥?10
m
s Pulse
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
15
40
40
5.0
300
500
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 100
m
Adc, VBE = 0)
Collector 鈥?Emitter Sustaining Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65擄C)
1. Pulse Test: Pulse Width
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
0.5
3.0
40
15
40
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
m
Adc
v
300
m
s; Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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