MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3638A/D
Switching Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS3638A
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
鈥?5
鈥?5
鈥?5
鈥?.0
鈥?00
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?00
m
Adc, VBE = 0)
Collector 鈥?Emitter Sustaining Voltage(2)
(IC = 鈥?0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 鈥?5 Vdc, VBE = 0)
(VCE = 鈥?5 Vdc, VBE = 0, TA = 鈥?5擄C)
Emitter Cutoff Current
(VEB = 鈥?.0 V, IC = 0)
Base Current
(VCE = 鈥?5 Vdc, VBE = 0)
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
IEBO
IB
鈥?/div>
鈥?/div>
鈥?.035
鈥?.0
鈥?5
鈥?.035
nA
鈥?5
鈥?5
鈥?5
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
m
Adc
m
Adc
v
v
(Replaces MPS3638/D)
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPS3638A 產品屬性
5,000
分離式半導體產品
晶體管(BJT) - 單路
-
PNP
500mA
25V
1V @ 30mA，300mA
35nA
20 @ 300mA，2V
625mW
150MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
MPS3638AOS
MPS3638A相關型號PDF文件下載
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