MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
MPS918/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS918*
MPS3563
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPS918
15
30
3.0
50
350
2.8
0.85
6.8
鈥?55 to +150
MPS3563
12
30
2.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA(1)
R
q
JC
Max
357
147
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(2)
(IC = 3.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0)
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
MPS918
MPS3563
V(BR)CBO
MPS918
MPS3563
V(BR)EBO
MPS918
MPS3563
ICBO
MPS918
MPS3563
鈥?/div>
鈥?/div>
10
50
3.0
2.0
鈥?/div>
鈥?/div>
nAdc
30
30
鈥?/div>
鈥?/div>
Vdc
15
12
鈥?/div>
鈥?/div>
Vdc
Vdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
1.0%.
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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