MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS2222/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS2222
MPS2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPS2222
30
60
5.0
600
625
5.0
1.5
12
鈥?55 to +150
MPS2222A
40
75
6.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125擄C)
(VCB = 50 Vdc, IE = 0, TA = 125擄C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MPS2222
MPS2222A
MPS2222
MPS2222A
MPS2222
MPS2222A
MPS2222A
ICBO
MPS2222
MPS2222A
MPS2222
MPS2222A
IEBO
MPS2222A
IBL
MPS2222A
鈥?/div>
20
nAdc
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.01
0.01
10
10
100
nAdc
碌Adc
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
30
40
60
75
5.0
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MPS2222 產(chǎn)品屬性
5,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
600mA
30V
1.6V @ 50mA，500mA
-
100 @ 150mA，10V
625mW
250MHz
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
MPS2222OS
MPS2222相關(guān)型號PDF文件下載
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英文版
Hybrid Power Splitter/Combiner
ETC
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英文版
Hybrid Power Splitter/Combiner
ETC [ETC]
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英文版
General Purpose Transistors
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英文版
NPN (GENERAL PURPOSE TRANSISTOR)
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General Purpose Transistors(NPN Silicon)
ONSEMI
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General Purpose Transistors(NPN Silicon)
ONSEMI [ON...
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General Purpose Transistors
MOTOROLA [...
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NPN (GENERAL PURPOSE TRANSISTOR)
SAMSUNG [S...
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Switching Transistors(NPN Silicon)
ONSEMI
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英文版
Switching Transistors
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英文版
Switching Transistors(NPN Silicon)
ONSEMI [ON...
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英文版
Switching Transistors
MOTOROLA [...
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英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | TO-92
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 200MA I(C) | TO-92
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 200MA I(C) | TO-92
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 200MA I(C) | TO-92
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 200MA I(C) | TO-92
ETC
-
英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92
ETC
-
英文版
PNP (GENERAL PURPOSE TRANSISTOR)
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英文版
General Purpose Transistors(PNP Silicon)
ONSEMI
1
2
3
4
5
6
