MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPQ7091/D
Quad Amplifier
Transistors
PNP Silicon
14
13
12
11
10
9
8
COMPLEMENTARY
1
2
3
4
TYPE B
5
6
7
MPQ7091
MPQ7093*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
MPQ7091
鈥?50
鈥?50
鈥?.0
鈥?00
Four Die
Equal
Power
1700
13.6
3.2
25.6
mW
mW/擄C
Watts
mW/擄C
擄C
MPQ7093
鈥?50
鈥?50
Unit
Vdc
Vdc
Vdc
mAdc
14
1
CASE 646鈥?6, STYLE 1
TO鈥?16
Each Die
Total Device Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Device Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
PD
750
5.98
PD
1.25
10
TJ, Tstg
鈥?5 to +150
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Coupling Factors
Each Die
Effective, 4 Die
Q1鈥換4 or Q2鈥換3
Q1鈥換2 or Q3鈥換4
Junction to
Case
100
39
46
5.0
Junction to
Ambient
167
73.5
56
10
Unit
擄C/W
擄C/W
%
%
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 鈥?.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 鈥?00
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 鈥?00
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 鈥?20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 鈥?.0 Vdc, IC = 0)
MPQ7091
MPQ7093
IEBO
鈥?/div>
鈥?/div>
鈥?00
V(BR)CEO
MPQ7091
MPQ7093
V(BR)CBO
MPQ7091
MPQ7093
V(BR)EBO
鈥?.0
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?50
鈥?50
nAdc
鈥?/div>
鈥?/div>
nAdc
鈥?50
鈥?50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
鈥?50
鈥?50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
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