MPF102
MPF102
N-Channel RF Amplifier
鈥?This device is designed for electronic switching applications such as
low ON resistance analog switching.
鈥?Sourced from process 50.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T
a
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
25
-25
10
- 55 ~ +155
Units
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
gs(off)
V
gs
I
DSS
g
fs
C
iss
C
rss
Parameter
Test Condition
I
G
= -1.0碌A, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
DS
= 15V, I
D
= 2nA
V
DS
= 15V, I
D
= 200碌A
V
DS
= 15V, V
GS
= 0
V
GS
= 0V, V
DS
= 15V, f = 1kHz
V
GS
= 0, V
DS
= 15V, f = 1MHz
V
GS
= 0, V
DS
= 15V, f = 1MHz
-0.5
2.0
2000
Min.
-25
-2.0
-8.0
-7.5
20
7500
7.0
3.0
Max.
Units
V
nA
V
V
mA
碌S
pF
pF
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Zero-Gate Voltage Drain Current
Forward Transconductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
On Characteristics *
Small Signal Characteristics
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. B, October 2004
1
2
3
