MP6759
TOSHIBA GTR Module Silicon N Channel IGBT
MP6759
Motor Control Applications
High Power Switching Applications
Unit: mm
路
路
路
路
路
The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement-mode
Low saturation voltage
: V
CE (sat)
= 2.7 V (max) (I
C
= 10 A)
High speed: t
f
= 0.35 碌s (max) (I
C
= 10 A)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-78A1A
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
鈥?/div>
Weight: 44 g (typ.)
Rating
600
鹵20
10
20
10
20
40
150
鈭?0
to 125
2500
(AC 1 minute)
1.5
Unit
V
V
A
Forward current
A
Collector power dissipation
(Tc = 25擄C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
W
擄C
擄C
V
N路m
1
2002-11-20
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