鈥?/div>
Tape and Reel Packaging Available
.040
1,02
4
GND
MP4TD0370
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
Description
M-Pulse's MP4TD0370 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0370 is
useful where a general purpose 50惟 gain block is
required. Typical applications include narrow and wide
band IF and RF amplifiers in industrial and military
applications.
The MP4TD0370 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
Id=35m A
10
GAIN (dB)
8
6
4
2
Gain Flat to D C
0
0.01
0.1
FR E QU E N C Y (GH z)
1
10
2
GND
.004 鹵.002
0,1 鹵0,05
.070
1,78
.035
0,89
.495 鹵.030
12,57 鹵0,76
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
鹵.005;
mm .xx =
鹵.13
Pin Configuration
Pin Number
1
2&4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Gold-Ceramic Microstrip Package Outline
1,2
Electrical Specifications @ T
A
= +25擄C, Id = 35 mA, Z0 = 50惟
Symbol
Parameters
Test Conditions
Gp
Power Gain (
鈴?/div>
S
21
鈴?/div>
2
)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 1.6 GHz
螖Gp
f
3 dB
3 dB Bandwidth
-
VSWR
in
Input VSWR
f = 0.1 to 3.0 GHz
VSWR
out
Output VSWR
f = 0.1 to 3.0 GHz
P
1 dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF
f = 1.0 GHz
50
惟
Noise Figure
IP
3
Third Order Intercept Point
f = 1.0 GHz
t
D
Group Delay
f = 1.0 GHz
V
d
Device Voltage
-
dV/dT
Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/擄C
Min.
11.5
-
-
-
-
-
-
-
-
4.5
-
Typ.
12.5
鹵0.9
2.0
1.6
1.5
10.0
5.5
23.0
125
5.0
-8.0
Max.
13.5
鹵1.2
-
-
-
-
-
-
-
5.5
-
Specification Subject to Change Without Notice
M-Pulse Microwave ___________________________________________________________________________________
North America :
PH (408) 432-1480
FX (408) 432-3440
1
1
2
3
