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MP4412 Datasheet

  • MP4412

  • Silicon N Channel MOS Type (Four L2-pi-MOSV inOne)

  • 8頁

  • TOSHIBA

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MP4412
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L
2
-蟺-MOSV inOne)
MP4412
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (4-device operation)
: P
T
= 28 W (Tc = 25擄C)
Low drain-source ON resistance: R
DS (ON)
= 0.17
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 4.5 S (typ.)
Low leakage current: I
GSS
= 鹵10 碌A(chǔ) (max) (V
GS
= 鹵16 V)
I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 100 V)
Enhancement-mode: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Industrial Applications
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
(1-device operation, Ta = 25擄C)
Drain power dissipation Ta = 25擄C
(4-device operation)
Tc = 25擄C
DC
Pulse
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
Rating
100
100
鹵20
5
20
2.2
4.4
28
180
5
0.22
mJ
E
ART
T
ch
T
stg
0.44
150
鈭?5
to 150
擄C
擄C
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-32C1D
Weight: 3.9 g (typ.)
W
P
DT
E
AS
I
AR
W
mJ
A
Single Pulse avalanche energy
(Note 1)
Avalanche current
Repetitive avalanche
energy
(Note 2) 4-device
operation
Channel temperature
Storage temperature range
1-device
operation
E
AR
Note 1: Condition for avalanche energy (single pulse) measurement
V
DD
= 25 V, starting T
ch
= 25擄C, L = 11.6 mH, R
G
= 25
鈩?
I
AR
= 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-01

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