鈥?/div>
2-32C1D
Weight: 3.9 g (typ.)
W
P
DT
E
AS
I
AR
W
mJ
A
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive avalanche
energy
(Note 2) 4 devices
operation
Channel temperature
Storage temperature range
1 device
operation
E
AR
Note 1: Condition for avalanche energy (single pulse) measurement
V
DD
= 50 V, starting T
ch
= 25擄C, L = 20 mH, R
G
= 25
鈩?
I
AR
= 3 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-01