MP4304
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
路
路
路
路
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 4.4 W (Ta = 25擄C)
High collector current: I
C (DC)
= 3 A (max)
High DC current gain: h
FE
= 600 (min) (V
CE
= 2 V, I
C
= 1 A)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
80
80
7
3
5
0.5
2.2
Unit
V
V
V
A
A
W
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-32C1B
Weight: 3.9 g (typ.)
P
T
T
j
T
stg
4.4
150
鈭?5
to 150
W
擄C
擄C
Array Configuration
2
3
4
9
10
11
1
6
5
8
12
7
1
2002-11-20
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