MP4006
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4006
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
路
路
路
Small package by full molding (SIP 10 pin)
High collector power dissipation (4 devices operation)
: I
C (DC)
= 鹵2 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= 鹵2 V, I
C
= 鹵1 A)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
NPN
80
80
8
2
3
0.5
2.0
PNP
鈭?0
鈭?0
鈭?
鈭?
鈭?
鈭?.5
Unit
V
V
V
JEDEC
A
A
W
鈥?/div>
鈥?/div>
2-25A1B
JEITA
TOSHIBA
Weight: 2.1 g (typ.)
P
T
T
j
T
stg
4.0
150
鈭?5
to 150
W
擄C
擄C
Array Configuration
R1 R2
10
6
8
7
3
9
5
2
4
R1 R2
1
R1
MP4006相關(guān)型號(hào)PDF文件下載
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英文版
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英文版
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英文版
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英文版
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