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PD - 94363A

IRF6602

DirectFET

TM

Power MOSFET

l

Application Specific MOSFETs

l

Ideal for CPU Core DC-DC Converters

l

Low Conduction Losses

l

Low Switching Losses

l

Low Profile (<0.7 mm)

l

Dual Sided Cooling Compatible

l

Compatible with existing Surface Mount

V

DSS

20V

R

DS(on)

max

13m

鈩?/div>

@V

GS

= 10V

19m

鈩?/div>

@V

GS

= 4.5V

I

D

11A

8.8A

Techniques

DirectFET

鈩?/div>

ISOMETRIC

Description

The IRF6602 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET

TM

packaging

to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm

profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly

equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling

to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power

the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that

are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

C

= 25擄C

I

D

@ T

C

= 70擄C

I

DM

P

D

@T

C

= 25擄C

P

D

@T

C

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ 4.5V

Continuous Drain Current, V

GS

@ 4.5V

Pulsed Drain Current

聛

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

20

11

8.8

88

2.3

1.5

18

鹵 20

-55 to + 150

Units

V

A

W

mW/擄C

V

擄C

Thermal Resistance

Symbol

R

胃JA

R

胃JA

R

胃JA

R

胃JC

R

胃J-PCB

Parameter

Junction-to-Ambient

聝

Junction-to-Ambient

聞

Junction-to-Ambient

聟

Junction-to-Case

聠

Junction-to-PCB mounted

Typ.

鈥撯€撯€?/div>

12.5

20

3.0

1.0

Max.

55

鈥撯€撯€?/div>

Units

擄C/W

www.irf.com

1

04/24/02

型號

版本

描述

廠商

下載
MOSFETIRF6...

英文版

DirectFET⑩ Power MOSFET(Vdss=20V)

IRF

MOSFETIRF6602
MOSFETIRF6...

英文版

DirectFET⑩ Power MOSFET(Vdss=20V)

IRF [Inter...

MOSFETIRF6602

MOSFETIRF6602 Datasheet

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