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MOCD211-M Datasheet

  • MOCD211-M

  • DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPT...

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  • FAIRCHILD

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DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
鈥?U.L. Recognized (File #E90700, Volume 2)
鈥?VDE Recognized (File #136616) (add option 鈥淰鈥?for VDE approval, i.e, MOCD211V-M)
鈥?Minimum BV
CEO
of 30 Volts Guaranteed
鈥?Standard SOIC-8 Footprint, with 0.050" Lead Spacing
鈥?Compatible with Dual Wave, Vapor Phase and IR Re鏗俹w Soldering
鈥?High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
鈥?Compact Dual Channel Optocoupler
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
APPLICATIONS
鈥?Interfacing and coupling systems of different potentials and impedances
鈥?General purpose switching circuits
鈥?Monitor and detection circuits
ANODE 2 3
6 COLLECTOR 2
CATHODE 2 4
5 EMITTER 2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25擄C Unless otherwise speci鏗乪d)
Rating
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 碌s, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, 1 min. Duration)
Total Device Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Ambient Operating Temperature Range
Storage Temperature Range
Symbol
I
F
I
F
(pk)
V
R
P
D
Value
60
1.0
6.0
90
0.8
30
7.0
150
150
1.76
Unit
mA
A
V
mW
mW/擄C
V
V
mA
mW
mW/擄C
V
CEO
V
ECO
I
C
P
D
V
ISO
P
D
T
A
T
stg
2500
250
2.94
-40 to +100
-40 to +125
Vac(rms)
mW
mW/擄C
擄C
擄C
漏 2003 Fairchild Semiconductor Corporation
Page 1 of 8
5/28/03

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