80 V Min.
鈥?/div>
VDE 0884 Availablle with Option 1
D E
Package Dimensions in inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode
Cathode
NC
1
2
3
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18擄 typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The MOC8050 is an optically coupled isolator with a
Gallium Arsenide infrared emitter and a silicon pho-
todarlington sensor. Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits, with no cross talk
between channels. These optocouplers can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic 鏗乪lds.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................ 3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
擄
C........................... 100 mW
Derate Linearly from 25
擄
C .................... 1.33 mW/
擄
C
Detector
Collector-Emitter Reverse Voltage..................... 80 V
Collector Load Current ................................125 mA
Power Dissipation at 25
擄
C Ambient ............ 150 mW
Derate Linearly from 25
擄
C ...................... 2.0 mW/
擄
C
Package
Total Package Dissipation at 25
擄
C .............. 250 mW
Derate Linearly from 25
擄
C ...................... 3.3 mW/
擄
C
Isolation Test Voltage.......................... 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C .................................. 10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C ................................ 10
11
鈩?/div>
Creepage Path ....................................... 8 mm min.
Clearance Path........................................ 7 mm min.
Comparative Tracking Index .............................. 175
Storage Temperature Range ......... 鈥?5
擄
C to +125
擄
C
Operating Temperature Range...... 鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C ..................... 10 sec.
Electrical Characteristics
(T
A
=25
擄
C)
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Collector-Emitter
Breakdown Volt-
age
Collector-Emitter
Leakage Current
Emitter-Collector
Breakdown
Voltage
Package
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Symbol
Min. Typ. Max. Unit
Condition
V
F
I
R
C
O
1.25
0.1
25
1.5
10
V
碌
A
pF
I
F
=20 mA
V
R
=3.0 V
V
R
=0
I
C
=10
碌
A
BV
CEO
80
V
I
CEO
V
ECO
5.0
25
8.0
1000 nA
V
V
CE
=60 V
I
F
=0
I
C
=10
碌
A
CTR
V
CEsat
VISO
500
0.9
5300
1.0
%
V
I
F
=10 mA
V
CE
=1.5 V
I
C
=50 mA
I
F
=50 mA
Isolation Test
Voltage
Coupling
Capacitance
Rise Time
Fall Time
VAC
RMS
1 sec., 60 Hz
C
ISOL
T
r
T
f
0.5
10
35
pF
碌
s
碌
s
V
CC
=13.5 V
I
F
=50 mA
R
L
=100
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