LESHAN RADIO COMPANY, LTD.
High Voltage Silicon Pin
Diode
These devices are designed primarily for VHF band switching applications but
are also suitable for use in general鈥損urpose switching circuits. They are supplied
in a cost鈥揺ffective plastic surface mount package for economical, high鈥搗olume
consumer and industrial requirements.
鈥?Long Reverse Recovery Time trr = 300 ns (Typ)
鈥?Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
鈥?Low Series Resistance @ 100 MHz 鈥?/div>
R
S
= 0.7
鈩?/div>
(Typ) @ I
F
= 10 mAdc
鈥?Reverse Breakdown Voltage = 200 V (Min)
鈥?Device Marking: 4R
MMVL3700T1
SILICON PIN
SWITCHING DIODE
1
2
PLASTIC, CASE 477
SOD鈥?323
ORDERING INFORMATION
Device
MMVL3700T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V
R
I
F
Symbol
P
D
Rating
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Total Device Dissipation FR鈥? Board,*
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
200
20
Max
200
1.57
635
150
Unit
Vdc
mAdc
Unit
mW
mW/擄C
擄C/W
擄C
THERMAL CHARACTERISTICS
R
胃JA
T
J
, T
stg
*FR鈥? Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
碌Adc)
Diode Capacitance
(V
R
= 20 Vdc, f = 1.0 MHz)
Series Resistance
(I
F
= 10 mAdc)
Reverse Leakage Current
(V
R
= 150 Vdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc)
C
T
R
S
I
R
t
rr
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.7
鈥?/div>
300
1.0
1.0
0.1
鈥?/div>
pF
鈩?/div>
碌Adc
ns
Symbol
V
(BR)R
Min
200
Typ
鈥?/div>
Max
鈥?/div>
Unit
Vdc
MMVL3700T1鈥?/2
MMVL3700T1 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
RF 二極管
-
PIN - 單
200V
20mA
1pF @ 20V，1MHz
1 歐姆 @ 10mA，100MHz
200mW
SC-76，SOD-323
SOD-323
帶卷 (TR)
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