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MMVL109T1 Datasheet

  • MMVL109T1

  • Silicon Epicap Diode

  • 2頁(yè)

  • LRC

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LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
MMVL109T1
Designed for general frequency control and tuning applications;
providing solid鈥搒tate reliability in replacement of mechnaical tuning
methods.
26鈥?2 pF
VOLTAGEVARIABLE
CAPACITANCE DIODES
1
鈥?/div>
High Q with Guaranteed Minimum Values at VHF Frequencies
鈥?/div>
Controlled and Uniform Tuning Ratio
鈥?/div>
Surface Mount Package
鈥?/div>
Device Marking: 4A
2
PLASTIC, CASE 477
SOD鈥?323
ORDERING INFORMATION
Device
MMVL109T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V
R
I
F
Symbol
P
D
Rating
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Total Device Dissipation FR鈥? Board,*
T
A
= 25擄C
Derate above 25擄C
R
胃JA
Thermal Resistance Junction to Ambient
T
J
, T
stg
Junction and Storage Temperature Range
*FR鈥? Minimum Pad
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
碌A(chǔ)dc)
Rev
erse Voltage Leakage Current
Value
30
200
Max
200
1.57
635
-55 to +150
Unit
Vdc
mAdc
Unit
mW
mW/擄C
擄C/W
擄C
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Symbol
V
(BR)R
Min
30
Typ
鈥?/div>
Max
鈥?/div>
Unit
Vdc
I
R
TC
C
鈥?/div>
鈥?/div>
鈥?/div>
300
0.1
鈥?/div>
碌A(chǔ)dc
ppm/擄C
(V
R
= 25 Vdc)
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
C
t
, Diode Capacitance
Q, Figure of Merit
V
R
= 3.0 Vdc, f = 1.0 MHz
V
R
= 3.0 Vdc
pF
f = 50 MHz
Device
Min
Nom
Max
Min
MMVL109T1
26
29
32
200
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 25 Vdc.
C
R
, Capacitance Ratio
C
3
/C
25
f = 1.0 MHz(Note 1)
Min
Max
5.0
6.5
MMVL109T1鈥?/2

MMVL109T1 產(chǎn)品屬性

  • ON Semiconductor

  • 變?nèi)荻O管

  • 26 pF

  • 30 V

  • SMD/SMT

  • SOD-323-2

  • Reel

  • VHF

  • Single

  • + 150 C

  • - 55 C

  • 5

  • SMD/SMT

  • Switching Diodes

  • 3000

  • 3 / 25

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