LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
MMVL105GT1
This device is designed in the Surface Mount package for general frequency
control and tuning applications. It provides solid鈥搒tate reliability in replacement
of mechanical tuning methods.
鈥?Controlled and Uniform Tuning Ratio
鈥?Device Marking: M4E
30 VOLT
VOLTAGEVARIABLE
CAPACITANCE DIODES
1
2
ORDERING INFORMATION
Device
MMVL105GT1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
PLASTIC, CASE 477
SOD鈥?323
1
CATHODE
MAXIMUM RATINGS
Symbol
V
R
I
F
Symbol
P
D
Rating
Continuous Reverse Voltage
Peak Forward Current
Characteristic
Total Device Dissipation FR-5 Board,*
T
A
= 25擄C
Derate above 25擄C
R
胃JA
T
J,
T
stg
*FR鈥? Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse BreakdownVoltage
(I
R
= 10
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
= 28 Vdc)
C
t
V
R
= 25 Vdc, f = 1.0 MHz
pF
Device Type
MMVL105T1
Min
1.5
Max
2.8
Q
V
R
= 3.0 Vdc
f = 50 MHz
Typ
250
Min
4.0
C
R
,
C
3
/C
25
f = 1.0 MHz
Max
6.5
I
R
鈥?/div>
50
nAdc
Symbol
V
(BR)R
Min
30
Max
鈥?/div>
Unit
Vdc
Themal Resistance Junction toAmbient
Junction and Storage Temperature
1.57
635
150
mW/擄C
擄C/W
擄C
Value
30
200
Max
200
Unit
Vdc
mAdc
Unit
mW
2
ANODE
THERMAL CHARACTERISTICS
MMVL105GT1鈥?/2
1
2
