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MMUN2113LT1 Datasheet

  • MMUN2113LT1

  • PNP SILICON BIAS RESISTOR TRANSISTOR

  • 12頁

  • ONSEMI

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MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
http://onsemi.com
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
鈥?/div>
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace 鈥淭1鈥?with 鈥淭3鈥?in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
VCBO
VCEO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
3
1
2
SOT鈥?3
CASE 318
STYLE 6
MARKING DIAGRAM
A6x M
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Thermal Resistance 鈥?/div>
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR鈥? @ Minimum Pad
2. FR鈥? @ 1.0 x 1.0 inch Pad
Symbol
PD
Max
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
508 (Note 1.)
311 (Note 2.)
174 (Note 1.)
208 (Note 2.)
鈥?5 to +150
Unit
mW
擄C/W
擄C/W
A6x
= Device Marking
x
= A 鈥?L (See
Page 2)
M
= Date Code
R
胃JA
R
胃JL
TJ, Tstg
DEVICE MARKING INFORMATION
擄C/W
擄C
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
MMUN2111LT1/D

MMUN2113LT1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路﹐預(yù)偏壓式

  • -

  • PNP - 預(yù)偏壓

  • 100mA

  • 50V

  • 47k

  • 47k

  • 80 @ 5mA，10V

  • 250mV @ 300µA，10mA

  • 500nA

  • -

  • 246mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 剪切帶 (CT)

  • MMUN2113LT1OSCT

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