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MMSF7N03Z Datasheet

  • MMSF7N03Z

  • SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS

  • 196.92KB

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF7N03Z/D
Designer's
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMSF7N03Z
Motorola Preferred Device
TMOS Single N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs鈩?are an advanced series of power MOSFETs which utilize
Motorola鈥檚 High Cell Density TMOS process and contain monolithic
back鈥搕o鈥揵ack zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low RDS(on) amd true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain鈥搕o鈥搒ource diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
鈩?/div>
SINGLE TMOS
POWER MOSFET
7.5 AMPERES
30 VOLTS
RDS(on) = 0.030 OHM
D
G
S
CASE 751鈥?5, Style 12
SO鈥?
鈥?/div>
Zener Protected Gates Provide Electrostatic Discharge Protection
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Designed to withstand 200V Machine Model and 2000V Human Body Model
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C (1)
Drain Current
鈥?Continuous @ TA = 70擄C (1)
Drain Current
鈥?Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25擄C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25擄C (2)
Linear Derating Factor (2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient (1)
鈥?Junction to Ambient (2)
(1) When mounted on 1 inch square FR鈥? or G鈥?0 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR鈥? or G鈥?0 board (VGS = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
R
胃JA
Value
30
30
鹵
15
7.5
5.6
60
2.5
20
1.6
12
鈥?55 to 150
450
50
80
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/擄C
Watts
mW/擄C
擄C
mJ
擄C/W
DEVICE MARKING
S7N03Z
Device
MMSF7N03ZR2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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