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MMSF3P03HD Datasheet

  • MMSF3P03HD

  • SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF3P03HD/D
Designer's
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMSF3P03HD
Motorola Preferred Device
TMOS P-Channel
Field Effect Transistors
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain鈥搕o鈥搒ource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
SINGLE TMOS POWER FET
3.0 AMPERES
30 VOLTS
RDS(on) = 0.1 OHM
鈩?/div>
D
CASE 751鈥?5, Style 13
SO鈥?
G
S
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Drain Current
鈥?Continuous @ TA = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C (2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
N鈥揅
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
EAS
R
胃JA
TL
Value
30
30
鹵
20
4.6
3.0
50
2.5
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
擄C
mJ
擄C/W
擄C
鈥?55 to 150
567
50
260
DEVICE MARKING
S3P03
(1) Negative signs for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
MMSF3P03HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
Motorola TMOS
漏
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

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