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MMSF3300 Datasheet

  • MMSF3300

  • SINGLE TMOS POWER MOSFET 30 VOLTS

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF3300/D
Advance Information
WaveFET
鈩?/div>
Power Surface Mount Products
MMSF3300
鈩?/div>
HDTMOS Single N-Channel
Field Effect Transistor
WaveFET鈩?devices are an advanced series of power MOSFETs which utilize Motorola鈥檚
latest MOSFET technology process to achieve the lowest possible on鈥搑esistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain鈥搕o鈥搒ource diode has a very low reverse recovery time. WaveFET鈩?/div>
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Characterized Over a Wide Range of Power Ratings
鈥?/div>
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by
Logic ICs
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?/div>
Saves Board Space
D
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 12.5 m
W
CASE 751鈥?06, Style 12
SO鈥?
Source
Source
Source
Gate
G
S
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
TOP VIEW
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise specified)
Parameter
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage
Gate鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Operating Voltage
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc)
Symbol
VDSS
VDGR
VGS
VGS
TJ, Tstg
EAS
Value
30
30
鹵
20
鹵
16
鈥?55 to 150
500
Unit
Vdc
Vdc
Vdc
Vdc
擄C
mJ
DEVICE MARKING
S3300
Device
MMSF3300R2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 3
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1998
1

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