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MMSF2P02E Datasheet

  • MMSF2P02E

  • SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF2P02E/D
Designer's
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMSF2P02E
Motorola Preferred Device
TMOS Single P-Channel
Field Effect Transistors
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain鈥搕o鈥搒ource diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc鈥揹c
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SINGLE TMOS
POWER MOSFET
2.5 AMPERES
20 VOLTS
RDS(on) = 0.250 OHM
鈩?/div>
D
G
S
CASE 751鈥?5, Style 13
SO鈥?
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO鈥? Package Provided
IDSS Specified at Elevated Temperature
N鈥揅
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C (2)
Drain Current
鈥?Continuous @ TA = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C(2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient(2)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JA
TL
Value
20
鹵
20
2.5
1.7
13
2.5
鈥?55 to 150
216
50
260
Unit
Vdc
Vdc
Adc
Apk
Watts
擄C
mJ
擄C/W
擄C
DEVICE MARKING
S2P02
(1) Negative sign for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
MMSF2P02ER2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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