MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
MMSF10N03Z
Motorola Preferred Device
TMOS Single N-Channel with
Monolithic Zener ESD Protected Gate
EZFETs鈩?are an advanced series of power MOSFETs which utilize
Motorola鈥檚 High Cell Density TMOS process and contain monolithic
back鈥搕o鈥揵ack zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain鈥搕o鈥搒ource diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
鈥?/div>
Zener Protected Gates Provide Electrostatic Discharge Protection
鈥?/div>
Designed to Withstand 200 V Machine Model and 2000 V Human Body Model
D
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
G
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Parameter
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C (1)
Drain Current
鈥?Continuous @ TA = 70擄C (1)
Drain Current
鈥?Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25擄C (1)
Linear Derating Factor @ TA = 25擄C (1)
Total Power Dissipation @ TA = 25擄C (2)
Linear Derating Factor @ TA = 25擄C (2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25
W
)
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 m
W
鈩?/div>
CASE 751鈥?5, Style 12
SO鈥?
Source
Source
Source
Gate
S
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
Max
30
30
鹵
20
10
7.7
50
2.5
20
1.6
12
鈥?55 to 150
1000
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
mJ
THERMAL RESISTANCE
Parameter
Junction鈥搕o鈥揂mbient (1)
Junction鈥搕o鈥揂mbient (2)
Symbol
R
q
JA
Typ
鈥?/div>
鈥?/div>
Max
50
80
Unit
擄C/W
(1) When mounted on 1鈥?square FR4 or G鈥?0 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G鈥?0 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
S10N3Z
Device
MMSF10N03ZR2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
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