MMSD103T1
Preferred Device
High Voltage Switching
Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
250
200
625
Unit
Vdc
mAdc
mAdc
1
Cathode
2
Anode
http://onsemi.com
THERMAL CHARACTERISTICS
Characteristic
Forward Power Dissipation,
FR鈥? Board (Note 1.) @ TA = 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Junction Temperature
Storage Temperature Range
1. FR鈥? = 1.0
0.75
0.062 in.
Symbol
PF
Value
400
3.2
174
492
125 Max
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
擄C
1
CASE 425鈥?4, STYLE 1
SOD鈥?23
JS = Specific Device Code
MARKING
DIAGRAM
2
JS
R
胃JL
R
胃JA
TJ
Tstg
ORDERING INFORMATION
Device
MMSD103T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150擄C)
Reverse Breakdown Voltage
(IBR = 100
碌Adc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100
鈩?
IR
鈥?/div>
鈥?/div>
V(BR)
VF
鈥?/div>
鈥?/div>
CD
trr
鈥?/div>
鈥?/div>
1000
1250
5.0
50
pF
ns
250
1.0
100
鈥?/div>
Vdc
mV
碌Adc
漏
Semiconductor Components Industries, LLC, 2001
1
August, 2000 鈥?Rev. 0
Publication Order Number:
MMSD103T1/D
MMSD103T1 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
單二極管/整流器
-
標準
250V
200mA（DC）
1.25V @ 200mA
小信號 =
50ns
1µA @ 200V
5pF @ 0V，1MHz
表面貼裝
SOD-123
SOD-123
帶卷 (TR)
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