MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMPQ2222/D
Quad General Purpose
Transistors
NPN Silicon
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
MMPQ2222
MMPQ2222A*
*Motorola Preferred Device
16
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCB
VEB
IC
Each
Transistor
Total Power Dissipation
@ TA = 25擄C
Derate above 25擄C
Total Power Dissipation
@ TC = 25擄C
Derate above 25擄C
Operating and Storage
Junction Temperature Range
PD
0.52
4.2
PD
0.8
6.4
TJ, Tstg
2.4
19.2
鈥?5 to +150
1.0
8.0
MMPQ2222
30
60
5.0
500
Four
Transistors
Equal Power
Watts
mW/擄C
Watts
mW/擄C
擄C
MMPQ2222A
40
75
Unit
Vdc
Vdc
Vdc
mAdc
1
CASE 751B鈥?5, STYLE 4
SO鈥?6
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IB = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MMPQ2222
MMPQ2222A
IEBO
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
10
100
nAdc
30
40
60
75
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
nAdc
v
300
m
s; Duty Cycle
v
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMPQ2222A 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 陣列
-
4 NPN（四路）
500mA
40V
1V @ 50mA，500mA
-
100 @ 150mA，10V
1W
300MHz
表面貼裝
16-SOIC（0.154"，3.90mm 寬）
16-SOIC
帶卷 (TR)
MMPQ2222ATR
MMPQ2222A相關(guān)型號PDF文件下載
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TRANS 4NPN 40V 0.2A 16SOIC
1
2
3
4
