Rev. 2.4, 10/2005
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Functional Block Diagram . . . . . . . . . . . . . . . 2
3 Electrical Characteristics . . . . . . . . . . . . . . . 3
4 RF Specifications . . . . . . . . . . . . . . . . . . . . . . 4
5 Input/Output ESD Specifications . . . . . . . . . 9
6 Application Information . . . . . . . . . . . . . . . . 11
7 Design Information . . . . . . . . . . . . . . . . . . . . 14
8 Package Information . . . . . . . . . . . . . . . . . . 18
9 Signal Description . . . . . . . . . . . . . . . . . . . . 20
10Product Documentation . . . . . . . . . . . . . . . 21
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Power Amplifier module for
quad-, tri-, and dual-band GSM handset applications,
functioning over the GSM850, EGSM, DCS, and PCS
frequency bands. This module is compatible with
GSM/GPRS operating modes (up to 50% duty cycle). To
simplify radio front-end design requirements, the power
control function is integrated, removing the need for
directional couplers and detector diodes. GSM burst
shaping and power control is integrated on an internal
control SmartMOS鈩?IC. The analog power control
signal is smoothed by a low-pass filter included in the
internal control SmartMOS chip, allowing over 45 dB
dynamic range to be achieved.
The MMM6035 also prevents degradation of switching
transients, regardless of battery conditions, due to an
internal anti-saturation detection feature. Transmit
Enable and Band Select functions are controlled through
0 to 2.8 V logic inputs. These functions are also
compatible with 0 to 1.8 V logic inputs.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
漏 Freescale Semiconductor, Inc., 2005. All rights reserved.