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MMJT350T1_06 Datasheet

  • MMJT350T1_06

  • ON Semiconductor [Bipolar Power Transistors PNP Silicon]

  • ONSEMI

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MMJT350T1
Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line鈭抩perated
applications such as low power, line鈭抩perated series pass and
switching regulators requiring PNP capability.
Features
http://onsemi.com
鈥?/div>
High Collector鈭扙mitter Sustaining Voltage 鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
CEO(sus)
= 300 Vdc @ I
C
= 1.0 mAdc
Excellent DC Current Gain 鈭?/div>
h
FE
= 30鈭?40 @ I
C
= 50 mAdc
Epoxy Meets UL 94 V鈭? @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb鈭扚ree Package is Available
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 2.75 WATTS
C 2,4
B1
E3
Schematic
4
1
2
3
SOT鈭?23
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
T350
G
G
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb鈭扚ree Package
T350
= Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMJT350T1
MMJT350T1G
Package
SOT鈭?23
SOT鈭?23
(Pb鈭扚ree)
Shipping
鈥?/div>
1000 / Tape & Reel
1000 / Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
1
January, 2006 鈭?Rev. 2
Publication Order Number:
MMJT350T1/D

MMJT350T1_06 PDF文件相關型號

MMJT350T1G

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