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MMH3111NT1 Datasheet

  • MMH3111NT1

  • Heterostructure Field Effect Transistor

  • 297.44KB

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MMH3111NT1
Rev. 0, 11/2007
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a General Purpose Amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as Cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
鈥?/div>
Frequency: 250 to 4000 MHz
鈥?/div>
P1dB: 22.5 dBm @ 900 MHz
鈥?/div>
Small - Signal Gain: 12 dB @ 900 MHz
鈥?/div>
Third Order Output Intercept Point: 44 dBm @ 900 MHz
鈥?/div>
Single 5 Volt Supply
鈥?/div>
Internally Prematched to 50 Ohms
鈥?/div>
Internally Biased
鈥?/div>
Low Cost SOT - 89 Surface Mount Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
MMH3111NT1
250 - 4000 MHz, 12 dB
22.5 dBm
GaAs HFET
12
3
CASE 1514 - 02, STYLE 2
SOT - 89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small - Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
12
- 14
- 14
22.5
44
2140
MHz
11.3
- 15
- 19
22
44
3500
MHz
10
- 16
- 14
22
42
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
(2)
Supply Current
(2)
RF Input Power
Storage Temperature Range
Junction Temperature
(3)
Symbol
V
DD
I
DD
P
in
T
stg
T
J
Value
6
300
10
- 65 to +150
150
Unit
V
mA
dBm
擄C
擄C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150擄C.
1. V
DD
= 5 Vdc, T
C
= 25擄C, 50 ohm system
Table 3. Thermal Characteristics
(V
DD
= 5 Vdc, I
DD
= 150 mA, T
C
= 25擄C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
(4)
37.5
Unit
擄C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MMH3111NT1
1
RF Device Data
Freescale Semiconductor

MMH3111NT1 產(chǎn)品屬性

  • 1,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 250MHz ~ 4GHz

  • 22.5dBm（177.8mW）

  • 12dB

  • 3.2dB

  • 手機(jī)，PCS，ISM，WLL

  • 5V

  • 150mA

  • 900MHz

  • TO-243AA

  • 帶卷 (TR)

  • MMH3111NT1-NDMMH3111NT1TR

MMH3111NT1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Heterostructure Field Effect Transistor
    FREESCALE
  • 英文版
    MMH3111NT1 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET
    Freescale Semiconductor

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