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MMG2401NR2 Datasheet

  • MMG2401NR2

  • Freescale Semiconductor, Inc [Indium Gallium Phosphorus HBT...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MMG2401
Rev. 3, 5/2006
Indium Gallium Phosphorus HBT
WLAN Power Amplifier
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26.5 dBm P1dB @ 2450 MHz
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Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)
High Gain, High Efficiency and High Linearity
EVM = 3% Typ @ P
out
= +19 dBM, 14% PAE
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.
Designed for 802.11g and dual mode applications with frequencies from
2400 to 2500 MHz.
MMG2401NR2
2400- 2500 MHz, 27.5 dB, 26.5 dBm
802.11g WLAN POWER AMPLIFIER
InGaP HBT
CASE 1483 - 01
QFN 3x3
Table 1. Maximum Ratings
Rating
Collector Supply
Base Supply First Stage
Base Supply Second Stage
Detector Bias Supply
DC Current
Symbol
V
CC
V
B1
V
B2
V
BIAS
I
DC
Value
5
5
5
5
171
Unit
V
V
V
V
mA
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Operating Temperature Range
Storage Temperature Range
Symbol
R
胃JC
T
C
T
stg
Value
185
(1)
- 40 to +85
- 55 to +150
Unit
擄C/W
擄C
擄C
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Simulated.
Rating
1
Package Peak Temperature
260
Unit
擄C
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MMG2401NR2
1
RF Device Data
Freescale Semiconductor

MMG2401NR2 產(chǎn)品屬性

  • 1,500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 2.4GHz ~ 2.5GHz

  • -

  • 26.5dB

  • -

  • 802.11g

  • 3.3V

  • 210mA

  • -

  • 12-VFQFN 裸露焊盤

  • 帶卷 (TR)

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