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MMFT960T1 Datasheet

  • MMFT960T1

  • MEDIUM POWER TMOS FET 300 mA 60 VOLTS

  • 125.95KB

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT960T1/D
Medium Power Field Effect
Transistor
N鈥揅hannel Enhancement鈥揗ode
Silicon Gate TMOS
SOT鈥?23 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc鈥揹c converters, solenoid and relay drivers.
The device is housed in the SOT鈥?23 package which is designed
for medium power surface mount applications.
鈥?/div>
Silicon Gate for Fast Switching Speeds
鈥?/div>
RDS(on) = 1.7 Ohm Max
鈥?/div>
Low Drive Requirement
鈥?/div>
The SOT鈥?23 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
鈥?/div>
Available in 12 mm Tape and Reel
Use MMFT960T1 to order the 7 inch/1000 unit reel
Use MMFT960T3 to order the 13 inch/4000 unit reel
1
GATE
3 SOURCE
2,4 DRAIN
MMFT960T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
300 mA
60 VOLTS
RDS(on) = 1.7 OHM MAX
廬
4
1
2
3
CASE 318E鈥?4, STYLE 3
TO鈥?61AA
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Non鈥揜epetitive
Drain Current
Total Power Dissipation @ TA = 25擄C(1)
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VDS
VGS
ID
PD
TJ, Tstg
Value
60
鹵
30
300
0.8
6.4
鈥?65 to 150
Unit
Volts
Volts
mAdc
Watts
mW/擄C
擄C
DEVICE MARKING
FT960
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R
胃JA
TL
156
260
10
擄C/W
擄C
Sec
1. Device mounted on a FR鈥? glass epoxy printed circuit board using minimum recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1

MMFT960T1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 300mA

  • 1.7 歐姆 @ 1A，10V

  • 3.5V @ 1mA

  • 3.2nC @ 10V

  • 65pF @ 25V

  • 800mW

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • Digi-Reel?

  • MMFT960T1OSDKR

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