鈩?/div>
Single N-Channel
Field Effect Transistor
Medium Power Surface Mount Products
These medium power SOT鈥?23 devices are an advanced series
of power MOSFETs which utilize Motorola鈥檚 High Cell Density
HDTMOS process. These surface mount MOSFETs feature low
RDS(on) and true logic level performance. They are capable of
withstanding high energy in the avalanche and commutation
modes and the drain鈥搕o鈥搒ource diode has a very low reverse
recovery time. SOT鈥?23 HDTMOS devices are designed for use in
low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters,
and power management in peripheral products such as printers
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
SOT鈥?23 Saves Board Space and Height
Diode Is Characterized for Use In Bridge Circuits
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SOT鈥?23 Package Provided
Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel
Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
MMFT6N03HD
鈩?/div>
TMOS POWER FET
6.0 AMPERES
30 VOLTS
RDS(on) = 0.050 OHM
D
4
G
S
CASE 318E鈥?4, Style 3
TO鈥?61AA
1
2
3
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous(1)
Drain Current
鈥?Continuous @ 100擄C(1)
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
(1)
Total PD @ TA = 25擄C(1)
Total PD @ TA = 25擄C(2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH)
Thermal Resistance
鈥?Junction to Ambient(1)
鈥?Junction to Ambient(2)
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
(1) When mounted on 1鈥?sq. Drain pad on FR鈥? bd material
(2) When mounted on minimum recommended Drain pad on FR鈥? bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
30
30
鹵
20
6.0
3.7
40
1.8
0.8
鈥?55 to 150
1300
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
擄C
mJ
擄C/W
R
胃JA
R
胃JA
TL
70
156
260
擄C
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
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