音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MMFT2N25E Datasheet

  • MMFT2N25E

  • TMOS POWER FET 2.0 AMPERES 250 VOLTS

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT2N25E/D
Product Preview
TMOS E-FET
鈩?/div>
High Energy Power FET
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced high voltage TMOS E鈥揊ET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain鈥搕o鈥搒ource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Capability Specified at Elevated
Temperature
鈥?/div>
Internal Source鈥搕o鈥揇rain Diode Designed to Replace External
Zener Transient Suppressor 鈥?Absorbs High Energy in the
Avalanche Mode
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage, RGS = 1.0 m
W
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage 鈥?Single Pulse (tp
鈮?/div>
50
m
S)
Drain Current 鈥?Continuous @ TC = 25擄C
Drain Current
鈥?Continuous @ TC = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
m
S)
Total Power Dissipation @ TC = 25擄C
Derate above 25擄C
Total PD @ TA = 25擄C mounted on 1鈥?Sq. Drain Pad on FR鈥? Bd. Material
Total PD @ TA = 25擄C mounted on 0.7鈥?Sq. Drain Pad on FR鈥? Bd. Material
Total PD @ TA = 25擄C mounted on min. Drain Pad on FR鈥? Bd. Material
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
MMFT2N25E
TMOS POWER FET
2.0 AMPERES
250 VOLTS
RDS(on) = 3.5
W
廬
4
2,4
D
1
2
3
1
G
S
3
CASE 318E鈥?4, STYLE 3
TO鈥?61AA
Value
250
250
鹵
20
鹵
40
2.0
0.6
7.0
0.77
6.2
1.0
1.2
0.8
鈥?55 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/擄C
Watts
TJ, Tstg
擄C
UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS (TJ < 150擄C)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25
鈩?
EAS
26
mJ
THERMAL CHARACTERISTICS
鈥?Junction鈥搕o鈥揂mbient on 1鈥?Sq. Drain Pad on FR鈥? Bd. Material
鈥?Junction鈥搕o鈥揂mbient on 0.7鈥?Sq. Drain Pad on FR鈥? Bd. Material
鈥?Junction鈥搕o鈥揂mbient on min. Drain Pad on FR鈥? Bd. Material
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
R
胃JA
90
103
162
260
擄C/W
TL
擄C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS is a registered trademark of Motorola, Inc.
E鈥揊ET is a trademark of Motorola, Inc.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

MMFT2N25E相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！