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MMFT2N02EL Datasheet

  • MMFT2N02EL

  • MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS

  • 253.31KB

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT2N02EL/D
Medium Power Field Effect Transistor
N鈥揅hannel Enhancement Mode
Silicon Gate TMOS E鈥揊ET
t
SOT鈥?23 for Surface Mount
This advanced E鈥揊ET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This device is also designed with a low threshold
voltage so it is fully enhanced with 5 Volts. This new energy efficient
device also offers a drain鈥搕o鈥搒ource diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, dc鈥揹c converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
The device is housed in the SOT鈥?23 package which is designed
for medium power surface mount applications.
鈥?/div>
Silicon Gate for Fast Switching Speeds
鈥?/div>
Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
鈥?/div>
Low RDS(on) 鈥?0.15
鈩?/div>
max
鈥?/div>
The SOT鈥?23 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
鈥?/div>
Available in 12 mm Tape and Reel
Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel.
Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 10 V, VGS = 5 V, Peak IL= 2 A, L = 0.2 mH, RG = 25
鈩?
Symbol
VDS
VGS
ID
IDM
PD(1)
TJ, Tstg
EAS
1
G
S
3
MMFT2N02EL
Motorola Preferred Device
廬
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.6 AMP
20 VOLTS
RDS(on) = 0.15 OHM
2,4
D
1
4
2
3
CASE 318E鈥?4, STYLE 3
TO鈥?61AA
Value
20
鹵
15
1.6
6.4
0.8
6.4
鈥?65 to 150
66
Unit
Vdc
Adc
Watts
mW/擄C
擄C
mJ
DEVICE MARKING
2N02L
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
胃JA
TL
156
260
10
擄C/W
擄C
Sec
(1) Power rating when mounted on FR鈥? glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E鈥揊ET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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