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MMFT1N10E Datasheet

  • MMFT1N10E

  • MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

  • 10頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT1N10E/D
Medium Power Field Effect Transistor
N鈥揅hannel Enhancement Mode
Silicon Gate TMOS E鈥揊ET
t
SOT鈥?23 for Surface Mount
This advanced E鈥揊ET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dc鈥揹c converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT鈥?23 package which is designed for medium
power surface mount applications.
鈥?/div>
Silicon Gate for Fast Switching Speeds
鈥?/div>
Low RDS(on) 鈥?0.25
鈩?/div>
max
鈥?/div>
The SOT鈥?23 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
鈥?/div>
Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Total Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG = 25
鈩?
Symbol
VDS
VGS
ID
IDM
PD(1)
TJ, Tstg
EAS
1
G
S
3
MMFT1N10E
Motorola Preferred Device
廬
MEDIUM POWER
TMOS FET
1 AMP
100 VOLTS
RDS(on) = 0.25 OHM
2,4
D
1
4
2
3
CASE 318E鈥?4, STYLE 3
TO鈥?61AA
Value
100
鹵
20
1
4
0.8
6.4
鈥?65 to 150
168
Unit
Vdc
Adc
Watts
mW/擄C
擄C
mJ
DEVICE MARKING
1N10
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
胃JA
TL
156
260
10
擄C/W
擄C
Sec
(1) Power rating when mounted on FR鈥? glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E鈥揊ET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
1

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