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MMDL770T1 Datasheet

  • MMDL770T1

  • Schottky Barrier Diode

  • 4頁

  • ONSEMI

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MMDL770T1
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high鈥揺fficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
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Extremely Low Minority Carrier Lifetime
Very Low Capacitance 鈥?1.0 pF @ 20 V
Low Reverse Leakage 鈥?200 nA (max)
High Reverse Voltage 鈥?70 Volts (min)
Available in 8 mm Tape and Reel
Device Marking: 5H
http://onsemi.com
1.0 pF SCHOTTKY
BARRIER DIODE
MAXIMUM RATINGS
Symbol
VR
Reverse Voltage
Rating
Value
70
Unit
Vdc
1
2
THERMAL CHARACTERISTICS
Symbol
PD
Characteristic
Total Device Dissipation FR鈥? Board,*
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
鈥?5 to
+150
Unit
mW
mW/擄C
擄C/W
擄C
PLASTIC
SOD鈥?23
CASE 477
R
qJA
TJ, Tstg
*FR鈥? Minimum Pad
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
MMDL770T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
漏
Semiconductor Components Industries, LLC, 2001
1
January, 2000 鈥?Rev. 0
Publication Order Number:
MMDL770T1/D

MMDL770T1 產(chǎn)品屬性

  • ON Semiconductor

  • 肖特基（二極管與整流器）

  • Schottky Diodes

  • 70 V

  • Single

  • 1 V at 0.01 A

  • 0.2 uA

  • - 55 C to + 150 C

  • SMD/SMT

  • SOD-323

  • Reel

  • 3000

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