鈥?/div>
Extremely Low Minority Carrier Lifetime 鈥?15 ps (Typ)
Very Low Capacitance 鈥?1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage 鈥?IR = 13 nAdc (Typ)
Device Marking: 4T
30 VOLTS SILICON
HOT鈥揅ARRIER DETECTOR
AND SWITCHING DIODES
1
2
MAXIMUM RATINGS
(TJ = 125擄C unless otherwise noted)
Symbol
VR
Reverse Voltage
Rating
Value
30
Unit
Volts
PLASTIC
SOD鈥?23
CASE 477
THERMAL CHARACTERISTICS
Symbol
PD
Characteristic
Total Device Dissipation FR鈥? Board,*
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
鈥?5 to
+150
Unit
mW
mW/擄C
擄C/W
擄C
1
CATHODE
2
ANODE
R
qJA
TJ, Tstg
ORDERING INFORMATION
Device
MMDL301T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
*FR鈥? Minimum Pad
Preferred
devices are recommended choices for future use
and best overall value.
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10
碌A(chǔ))
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
Symbol
V(BR)R
CT
IR
VF
VF
Min
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
0.9
13
0.38
0.52
Max
鈥?/div>
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
January, 2000 鈥?Rev. 0
Publication Order Number:
MMDL301T1/D
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