LESHAN RADIO COMPANY, LTD.
Silicon Hot鈥揅arrier Diodes
Schottky Barrier Diode
MMDL301T1
These devices are designed primarily for high鈥揺fficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low鈥揷ost, high鈥搗olume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
鈥?Extremely Low Minority Carrier Lifetime 鈥?15 ps (Typ)
鈥?Very Low Capacitance 鈥?1.5 pF (Max) @ V
R
= 15 V
鈥?Low Reverse Leakage 鈥?I
R
= 13 nAdc (Typ)
鈥?Device Marking: 4T
30 VOLTS SILICON
HOT鈥揅ARRIER DETECTOR
AND SWITCHING DIODES
1
2
1
CATHODE
2
ANODE
PLASTIC SOD鈥?323
CASE 477
MAXIMUM RATINGS
( T
J
=125擄C unless otherwise noted )
Symbol
V
R
Rating
Reverse Voltage
Value
30
Unit
Volts
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Total Device Dissipation FR鈥? Board,*
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
鈥?5 to+150
Unit
mW
mW/擄C
擄C/W
擄C
R
胃JA
T
J
, T
stg
*FR鈥? Minimum Pad
ORDERING INFORMATION
Device
MMDL301T1
Package
SOD鈥?23
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
碌A(chǔ))
Diode Capacitance
(V
R
= 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V
R
= 25 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
V
F
Min
30
Typ
鈥?/div>
Max
鈥?/div>
Unit
Volts
pF
nAdc
Vdc
Vdc
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.9
13
0.38
0.52
1.5
200
0.45
0.6
F
S2鈥?/3
MMDL301T1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
RF 二極管
-
肖特基 - 單
30V
-
1.5pF @ 15V，1MHz
-
200mW
SC-76，SOD-323
SOD-323
帶卷 (TR)
MMDL301T1相關(guān)型號(hào)PDF文件下載
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