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MMDJ3P03BJT Datasheet

  • MMDJ3P03BJT

  • DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

  • 4頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3P03BJT/D
Preliminary Data Sheet
Plastic Power Transistors
SO鈥? for Surface Mount Applications
鈥?/div>
Collector 鈥揈mitter Sustaining Voltage 鈥?VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
鈥?/div>
High DC Current Gain 鈥?hFE
= 140 (Min) @ IC = 1.2 Adc
= 125 (Min) @ IC = 3.0 Adc
鈥?/div>
Low Collector 鈥揈mitter Saturation Voltage 鈥?VCE(sat)
= 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.60 Vdc (Max) @ IC = 5.0 Adc
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
MMDJ3P03BJT
Motorola Preferred Device
DUAL BIPOLAR
POWER TRANSISTOR
PNP SILICON
30 VOLTS
3 AMPERES
E
B
E
B
Schematic
C
CASE 751鈥?5, Style 16
(SO鈥?)
C
Emitter鈥?
Base鈥?
Emitter鈥?
Base鈥?
1
2
3
4
8
7
6
5
Collector鈥?
Collector鈥?
Collector鈥?
Collector鈥?
Top View
Pinout
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MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Symbol
VCB
Value
45
30
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
VCEO
VEB
IC
IB
鹵
8.0
3.0
5.0
1.0
Collector Current 鈥?Continuous
Collector Current
鈥?Peak
Base Current 鈥?Continuous
Operating and Storage Junction Temperature Range
TJ, Tstg
鈥?55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
PD
TL
Max
Unit
Thermal Resistance 鈥?Junction to Ambient(1)
Total Power Dissipation @ TA = 25
_
C(1)
Derate above 25
_
C
Maximum Temperature for Soldering
62.5
2.0
16
_
C/W
Watts
mW/
_
C
260
_
C
(1) Mounted on 2鈥?sq. FR鈥? board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices
are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola, Inc. 1997
Motorola Bipolar Power Transistor Device Data
1

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